光滑激光脉冲作用下的强场自电离

本文研究了光滑激光脉冲作用下包含高阶离化的强场自电离过程,导出了其中的基本方程,得到了基态布居和光电子谱的一系列解析表达式。讨论了指数增长脉冲作用时的具体结果,发现高能谱比低能谱更能呈现出光电子谱在脉冲光作用下特有的多峰分裂。     

利用相位共轭技术补偿光纤中色散效应的条件

利用相位共轭器的频率反转特性的,补偿光纤中的色散效应,在理论上和实验上得到了证明.由色散脉冲的傅里叶交换确定了光纤中二次色散效应可以被忽略的条件,得到了共轭器的反射率和带宽与非线性介质的长度L,参数|K|L之间的关系曲线,找到了影响补偿效果的主要因素.     

正方分布的4×4单模光纤熔锥耦合器耦合特性分析

本文以线性耦合波方程为基础,采用散射矩阵的方法讨论了具有正方分布的4×4单模光纤熔锥形耦合器的耦合特性,并与实验作了比较,得到了比较一致的结果。     

低通量慢中子对Bi系超导体的辐照效应

本文研究低通量慢中子对Bi系超导体的辐照效应。实验结果表明:(1)Bi系超导体在适量慢中子辐照后,临界电流密度J_c和零电阻温度T_c0都有不同程度提高;(2)低通量慢中子和高通量快中子对Bi系超导体具有相似的辐照效应。 关键词：     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

一种非刚性医学图像点匹配方法

提出了一种非刚性点匹配的算法并把其运用于医学图像配准．该算法采用信号滤波的方法来获得点集间的匹配信息，并运用松弛标记法将各点邻域关系对模糊的匹配信息进行迭代获得明确的匹配关系．在此基础上，利用高斯径向基函数来描述点模式间的弹性形变，在基本的迭代框架下实现问题的求解．实验结果显示在形变程度为5％、出格点比率50％和噪声标准差为5％的情况下该算法的匹配误差能控制在0．13以下，表明了该算法的鲁棒性和有效性，较好地解决了医学非刚性形变的点匹配问题．     

Effect of Molecular Weight on Liquid Crystal Photoalignment by Photosensitive Polyester Containing Thrifluoromethyl Moieties

We investigate the liquid-crystal （LC） alignment direction on photoalignment films formed from photosensitive polyester containing thrifluoromethyl moieties （PPDA） with various molecular weights by crossed polarized optical microscopy. It is found that LC alignment behaviour changes with molecular weight of PPDA. The LC alignment on PPDA irradiated films with the highest molecular weight is homogeneous, while those with low and intermediate molecular weights are homeotropic. However, surface morphologies show weak dependence on molecular weight. The surfaces are smooth and there is no clear morphological anisotropy on these aligned films observed by an atomic force microscope. The surface energies of the irradiated films are also measured by using an indirect contact-angle method where both surface energy and its polar component, increase with increasing molecular weight. Different polar surface energies can be considered as a main reason for different alignment characteristics.     

半正二阶三点边值问题的解和正解

考察了非线性二阶三点边值问题的n个解和正解的存在性,其中允许非线性项有一个负的下界并且n是一个任意的自然数．主要结论表明该问题可以具有n个解或者正解,只要非线性项在某些有界集上的“高度”是适当的．     

加权增量卡尔曼滤波法在ICP－AES中的应用

卡尔曼滤波法用于ＩＣＰ－ＡＥＳ分析时，在白色噪音情况下能给出准确的分析结果，当试样的某些组分未知时，测量噪音将不是白色的，分析结果将不准确。本文提出了一种加权增量卡尔曼滤波法来解决这个问题。